Publications


  1. “Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky contact”, S. Rajput, M. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li, Nat. Commun. 4, 2752 (2013).

  2. (Cover article) “Charging Dirac states at antiphase domain boundaries in the three-dimensional topological insulator Bi2Se3”,Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li, Phys. Rev. Lett. 110, 186804 (2013).

  3. “Nitrogen doping of epitaxial graphene on SiC(0001): the formation of N-vacancy complexes and their magnetism”, S. H. Rhim, Y. Qi, Y. Liu, M. Weinert, and L. Li, Appl. Phys. Lett. 100, 233119 (2012).

  4. “Structural and magnetic properties of MBE grown GeMnN2 thin films”, Y. Liu, and V. K. Lazarov, S. H. Cheung, D. J. Keavney, Z. Gai, M. Gajdardziska-Josifovska, M. Weinert, and L. Li, Phys. Rev. B 85, 144113 (2012).

  5. “The role of defects in the magnetic properties of Cu-doped GaN”, Y. Liu, Z. Gai, M. Weinert, and L. Li, Phys. Rev. B 85, 075207 (2012).

  6. “Spiral growth without dislocations: Molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)”, Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012).

  7. “A novel Si diffusion path for pit-free graphene growth on SiC(0001)”, G. F. Sun, S. H. Rhim, Y. Liu, Y. Qi, J. F. Jia, Q. K. Xue, M. Weinert, and L. Li, Phys. Rev. B 84, 195455 (2011).

  8. (Cover article) “Spiral growth and formation of strain-mediated surface nano structures during the initial stages of InN epitaxy on GaN(0001)”, Y. Liu and L. Li, Nanotechnology 22, 425707 (2011).

  9. “Imaging epitaxial graphene on SiC(0001) using STM with functionalized W tips”, S. H. Rhim, Y. Qi, G. F. Sun, Y. Liu, M. Weinert, and L. Li, Phys. Rev. B 84, 125425 (2011).

  10. (Cover article) “Electron standing waves on GaN(0001) pseudo (1x1): A FT-STM study at room temperature”, G. F. Sun, Y. Liu, Y. Qi, J. F. Jia, Q. K. Xue, M. Weinert, and L. Li, Nanotechnology 21, 435401 (2010).

  11. “Epitaxial graphene on SiC(0001): more than just honeycomb”, Y. Qi, R. H. Rhim, G. F. Sun, M. Weinert, and L. Li, Phys. Rev. Lett. 105, 085502 (2010).

  12. (Cover article) “Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)”, G. F. Sun, J. F. Jia, Q. K. Xue, and L Li, Nanotechnology 20, 355701 (2009).

  13. “Electronic structures of Mn-induced phases on GaN(0001)”, Y. Qi, G. F. Sun, M. Weinert, and L. Li, Phys. Rev. B 80, 235323 (2009).

  14. “Incorporation of Ge on the GaN(0001) surface”, Y. Qi, S. T. King, S. H. Cheung, M. Weinert, and L. Li,.Appl. Phys. Lett. 92, 111918 (2008).

  15. “Role of Mn mobility in formation of cubic and hexagonal Ga1-xMnxN”, V. K. Lazarov, S. H. Cheung, Y. Cui, L. Li, and M. Gajdardziska-Josifovska, Appl. Phys. Lett. 92, 101914 (2008).

  16. “An atomistic view of the autosurfactant effect during GaN epitaxy”, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 98, 206106 (2007).

  17. (Invited paper) “Spectroscopic studies of compound semiconductor surfaces as it relates to the growth of nanomaterials”, R. S. Woo, L. Li, and R. F. Hicks, Proc. SPIE vol. 6325, 63250K (2006).

  18. “Observation of standing waves at steps on GaN(0001) pseudo-(1x1) surface by scanning tunneling spectroscopy at room temperature”, M. L. Harland and L. Li, Appl. Phys. Lett. 89, 132104 (2006).

  19. “The role of defect sites and Ga polarization in the magnetism of Mn-doped GaN”, D. J. Keavney, S. H. Cheung, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 95, 257201 (2005).

  20. “Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111)”, V. K. Lazarov, J. Zimmerman, S. H. Cheung, L. Li, M. Weinert, and M. Gajdardziska-Josifovska, Phys. Rev. Lett. 94, 216101 (2005).

  21. “Porous gallium phosphide: challenging material for nonlinearoptical applications”, V. A. Melnikov, L. A. Golovan, S. O. Konorov, A. B. Fedotov, G. I. Petrov, L. Li, V. V. Yakovlev, S. A. Gavrilov, A. M. Zheltikov, V. Yu. Timoshenko1, and P. K. Kashkarov, Phys. Stat. Sol. (c) 2, 3248 (2005).

  22. “Indium phosphide (001)-(2x1): direct evidence for a hydrogen-stabilized surface reconstruction”, G. Chen, S. F. Cheng, D.J. Tobin, L. Li, K. Raghavachari, and R. F. Hicks, Phys. Rev. B 68, 121303 (2003).

  23. “Cubic GaN formation in Mn/GaN multilayer films grown on 6H-SiC(0001)”, Y. Cui, V. K. Lazarov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska, L. Li, Appl. Phys. Lett. 82, 4666 (2003).

  24. “Efficient second-harmonic generation by scattering from porous gallium phosphide”, L. A. Golovan, V. A. Mel’nikov, S. O. Konorov, A. B. Fedotov, S. A. Gavrilov, A. M. Zheltikov, P. K. Kashkarov, V. Yu. Timoshenko, G. I. Petrov, L. Li, and V. V. Yakovlev, JETP Lett. 78, 193 (2003).

  25. “A (10x10) domain wall structure induced by Mn adsorption on the pseudo (1x1) surface of GaN (0001)”, Y. Cui and L. Li, Surf. Sci. 522, L21 (2003).

  26. “Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds”, K. Raghavachari, Q. Fu, G. Chen, L. Li, C. H. Li, D. C. Law, and R. F. Hicks, J. Am. Chem. Soc. 124, 15119 (2002).

  27. “Evolution of growth spirals during molecular beam epitaxy of GaN on 6H-SiC (0001)”, Y. Cui and L. Li, Phys. Rev. B 66, 155330 (2002).

  28. “Suppression of phase segregation during molecular-beam epitaxial growth of GaMnN using nitrogen-hydrogen plasma”, Y. Cui and L. Li, Appl. Phys. Lett. 80, 4139 (2002).

  29. “Arsenic adsorption and exchange with phosphorus on indium phosphide (001)”, C. H. Li, L. Li, D. C. Law, S. B. Visbeck, and R.F. Hick, Phys. Rev. B 65, 205322 (2002).

  30. “Suppression of spiral growth in molecular beam epitaxy of GaN on vicinal 6H-SiC(0001)”, Y. Cui and L. Li, Phys. Stat. Sol. (a) 188, 583 (2001).

  31. (invited paper) “The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors”, R. F. Hicks, Q. Fu, L. Li, S. B. Visbeck, Y. Sun, C. H. Li, and D. C. Law, J. de Physique IV 11, 31 (2001).

  32. “Site-specific surface chemistry of GaAs (001)”, L. Li, Surf. Rev. Lett. 7, 625 (2000).

  33. "Stress-induced anisotropy of gallium phosphide islands on gallium arsenide", C. H. Li, L. Li, Q. Fu, M. J. Begarney and R. F. Hicks, Appl. Phys. Lett. 77, 2139 (2000).

  34. “Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001)”, M. J. Begarney, L. Li, C. H. Li, D. C. Law, Q. Fu, and R. F. Hicks, Phys. Rev. B 62, 8092 (2000).

  35. “Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy, J D. C. Law, L. Li, M. B. Begarney, and R. F. Hicks, J. Appl. Phys. 88, 508 (2000).

  36. “Mechanism of arsine adsorption on the gallium-rich GaAs (001)-(4x2) surface”, Q. Fu, L. Li, C. H. Li, M. J. Begarney, D. C. Law, and R. F. Hicks, J. Phys. Chem. B 104, 5595 (2000).

  37. Ab initio cluster calculations of hydrogenated GaAs (001) surfaces”, Q. Fu, L. Li, and R. F. Hicks, Phys. Rev. B 61, 11034 (2000).

  38. “Determination of InP (001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen”, L. Li, Q. Fu, C. H. Li, B. –K, Han, and R. F. Hicks, Phys. Rev. B 61, 10223 (2000).

  39. “A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy”, L. Li, B. –K. Han, D. Law, C. H. Li, Q. Fu and R. F. Hicks, Appl. Phys. Lett. 75, 683 (1999).

  40. “Site-specific chemistry of gallium arsenide metalorganic chemical deposition”, Q. Fu, L. Li, M. Begarney, B. –K. Han, D. Law, and R. F. Hicks, J. Phys. IV 9, 3 (1999).

  41. “Hydrogen adsorption sites on GaAs (001) reconstructions”, R. F. Hicks, H. Qi, Q. Fu, B. –K. Han, and L. Li, J. Chem. Phys. 110, 10498 (1999).

  42. “Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy”, M. J. Begarney, L. Li, B. –K, Han, D. Law, C. H. Li, H. Yoon, M. S. Goorsky, and R. F. Hicks, J. Appl. Phys. 86, 318 (1999).

  43. “Example of a compound semiconductor surface that mimics silicon: The InP (001) (2x1) reconstruction”, L. Li, B. –K. Han, Q. Fu, and R. F. Hicks, Phys. Rev. Lett. 82, 1879 (1999).

  44. “Step structure of arsenic-terminated vicinal Ge (100)”, S. Gan, L. Li, M. J. Begarney, D. Law, B. –K. Han, and R. F. Hicks, J. Appl. Phys. 85, 2004 (1999).

  45. “Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy”, L. Li, B. –K. Han, and R. F. Hicks, Appl. Phys. Lett. 73, 1239 (1998).

  46. “Characterization of dislocations in germanium substrates induced by mechanical stress”, S. Gan, L. Li and R. F. Hicks, Appl. Phys. Lett. 73, 1068 (1998).

  47. “Structure and composition of c(4x4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy”, B. –K Han, L. Li, and R. F. Hicks, Appl. Phys. Lett. 72, 3347 (1998).

  48. “The reaction of carbon tetrachloride with gallium arsenide (001)”, L. Li, S. Gan, B. –K. Han, and R. F. Hicks, Appl. Phys. Lett. 72, 951 (1998).

  49. “Gallium Arsenide and Indium Arsenide Surfaces Produced by Metalorganic Vapor-Phase Epitaxy”, L. Li, B. –K. Han, M. Begarney, D. Law, and R. F. Hicks, J. Cryst. Growth 195, 28 (1998).

  50. (Invited paper) “Structure of compound semiconductor surfaces in the MOVPE environment”, B. –K. Han, L. Li, M. J. Begarney, D. Law, and R. F. Hicks, Proceedings of The 194th Electrochemical Society Meeting, Boston, MA, November 1-6, 1998.

  51. “Atomic structure of the InxGa1-xAs/GaAs (001) (2x4) and (3x2) surfaces”, L. Li, B. –K. Han, R. F. Hicks, H. Yoon, and M. S. Goorsky, Ultramicroscopy 73, 229 (1998).

  52. “Site-specific chemistry of carbon tetrachloride decomposition on GaAs (001)”, L. Li, H. Qi, S. Gan, B. –K. Han, and R. F. Hicks, Appl. Phys. A 66, S501 (1998).

  53. “Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor-phase epitaxy”, B. –K. Han, L. Li, M. J. Kappers, R. F. Hicks, H. Yoon, M. S. Goorsky, and K. T. Higa,  J. Electron. Mater. 27, 81 (1998).

  54. “Observation of the atomic structure of GaAs (001) films grown by metalorganic vapor phase epitaxy”, L. Li, B. –K. Han, S. Gan, H. Qi, and R. F. Hicks, Surf. Sci. 398, 386 (1998).

  55. “Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces”, S. Gan, L. Li, B. –K. Han, H. Qi, and R. F. Hicks, Surf. Sci. 395, 69 (1998).

  56. “Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy”, M. L. Warddrip, M. J. Kappers, L. Li, H. Qi, B. –K. Han, S. Gan, and R. F. Hicks, J. Electron. Mater. 26, 1189 (1997).

  57. “Effect of surface polarity on gallium adsorption on 6H-SiC surfaces”, L. Li, C. Tindall, Y. Hasegawa, and T. Sakurai, Appl. Phys. Lett. 71, 2776 (1997).

  58. “STM study of C2H2 adsorption on Si (100)”, L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, T. Sakurai, Phys. Rev. B 56, 4648 (1997).

  59. “Interaction of C60 with the (3x3) and (Ö3xÖ3) surfaces of 6H-SiC(0001): adsorption, decomposition, and SiC growth”, L. Li, Y. Hasegawa, H. Shinohara, and T. Sakurai, J. Vac. Sci. & Technol. B 15, 1300 (1997).

  60. “Si- and C-rich structure of the 6H-SiC(0001) surface”, L. Li, Y. Hasegawa, and T. Sakurai, J. Vac. Sci. & Technol. B 15, 1307 (1997).

  61. “Structural and vibrational properties of 6H-SiC(0001) surfaces studied using STM/HREELS”, L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, T. Sakurai, Surf. Sci. 385, 60 (1997).

  62. “Scanning tunneling microscopy of N2H4 on silicon surfaces”, C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, T. Sakurai, Surf. Sci. 380, 481 (1997).

  63. “Adsorption of N2H4 on silicon surfaces”, C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, and T. Sakurai, J. Vac. Sci & Technol. B 15, 1155 (1997).

  64. “Field-ion scanning tunneling microscopy study of the atomic structure of 6H-SiC surfaces cleaned by in situ Si molecular beam etching”, L. Li, Y. Hasegawa, and T. Sakurai, and I. S.T. Tsong, J. Appl. Phys. 80, 2524 (1996).

  65. “Surface atomic vacancies created by ion bombardment and desorption”, Y. Wei, L. Li, and I. S. T. Tsong, Nucl. Instrum. Meth. B 115, 572 (1996).

  66. “Surface structure and morphology induced by ultrathin Ti films on 6H-SiC(0001) and (000-1)”, L. Li and I. S.T. Tsong, Surf. Sci. 364, 54 (1996).

  67. “Atomic structures of 6H-SiC (0001) and (000) surfaces”, L. Li and I. S. T. Tsong, Surf. Sci. 351, 141 (1996).

  68. “Etching of Si(111)-(7x7) and Si(100)-(2x1) surfaces by atomic hydrogen”, Y. Wei, L. Li, and I. S. T. Tsong, Appl. Phys. Lett. 66, 1818 (1995).

  69. “Surface morphology induced by Ga and Sn overlayers on Si (100) and Si (311) surfaces”, L. Li, Y. Wei, and I. S. T. Tsong. J. Vac. Sci. & Technol. A 13, 1473 (1995).

  70. “Surface morphology of Si(111)-(7x7) under an external isotropic tensile stress”, Y. Wei, L. Li, and I. S. T.  Tsong, J. Vac. Sci. & Technol. A 13, 1609 (1995).

  71. “Surface morphology of Pb overlayers grown on Si(100)-(2x1)”, L. Li, C. Koziol, K. Wurm, Y. Hong, E. Bauer, and I. S. T. Tsong, Phys. Rev. B 50, 10834 (1994).

  72. “Reconstruction, step-bunching and faceting of a vicinal Si(100) surface induced by indium adsorption”, L. Li, Y. Wei, and I. S. T. Tsong, Surf. Sci. 304, 1 (1994).

  73. “The structure of the Si(100)-(4x3)In surface studied by STM and ICISS”, B. E. Steele, D. M. Cornelison, L. Li, and I. S. T. Song, Nucl. Instrum. Meth. B 85, 414 (1994).

  74. “Structure of the Si(100)-(2x2)In surface”, B. E. Steele, L. Li, J. L. Stevens, I. S. T. Tsong, Phys. Rev. B 47, 9925 (1993).