My publications in reverse chronological order:

138. The Symmetries of Image Formation by Scattering, D. Giannakis, P. Schwander, C.H. Yoon, and A. Ourmazd (2010), submitted.

137. Bayesian Algorithms for Recovering Structure from Single-particle Diffraction Snapshots of Unknown Orientation: A Comparison, B. Moths, and A. Ourmazd (2010), submitted.

136. Structure from Random Snapshots, A. Ourmazd, P. Schwander, and George N. Phillips, Jr., Proceedings of the SPIE Symposium on Optics and Photonics (2010), in press.

135. Mapping the Conformations of Biological Assemblies, P. Schwander, R. Fung, G.N. Phillips Jr., and A. Ourmazd, New Journal of Physics 12, 035007 (2010).

134. Molecular Structure Determination from X-ray Scattering Patterns of Laser-aligned Symmetric-top Molecules, P.J. Ho, D. Starodub, D.K. Saldin, V.L. Shneerson, A. Ourmazd, and R. Santra, J. Chemical Phys. 131, 131101 (2009).

133. Structure from Fleeting Illumination of Faint Spinning Objects in Flight, R. Fung, V.L. Shneerson, D.K. Saldin, and A. Ourmazd, Nature Physics, 5, 64-67 (2009). Advance online publication (Nov. 2008) doi: 10.1038/nphys1129. See also: News & Views, Nature Physics, 5, 17-18 (2009); Research Highlights, Nature Methods, 6, 8-9 (2009), APS Condensed Matter Journal Club (Sept. 2008).

132. Structure of Isolated Biomolecules from Ultrashort X-ray Pulses: Exploiting the Symmetry of Random Orientations, D.K. Saldin, V.L. Shneerson, R. Fung, and A. Ourmazd, J. Phys. Condensed Matter 21, 134014 (2009).

131. Crystallography without Crystals. I. The Common-line Method for Assembling a three-dimensional diffraction volume from single-particle scattering, V.L. Shneerson, A. Ourmazd, and D.K. Saldin, Acta Cryst., A64, 303-315 (2008).

130.   Local electrostatic potential and process-induced boron redistribution in patterned Si/ SiGe/Si heterostructures, A. Orchowski, W.-D. Rau, H. Rücker, B. Heinemann, P. Schwander, B. Tillack, and A.Ourmazd, Appl. Phys. Lett., 80, 2556 (2002).

129.   Two-Dimensional Mapping of pn Junctions by Electron Holography, W.-D. Rau, P. Schwander, A. Ourmazd, Phys. Stat. Sol. (b), 222, 213, (2000).

128.   Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Ho­lography, W.-D. Rau, P. Schwander, F.H. Baumann, W. Höppner, A. Ourmazd, Phys. Rev. Lett., 82 (12), 2614 (1999).

127.   Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy, P. Schwander, W.-D. Rau, C. Kisielowski, M. Gribelyuk, A. Ourmazd, Semiconductors and Semimetals Vol. 51B: Identification of Defects in Semicon­ductors, ed. M. Stavola (San Diego: Academic Press 1998), p. 226.

126.   Two-Dimensional Dopant Profiling of Deep Submicron MOS Devices by Electron Holography, W.-D. Rau, F.H. Baumann, H.-H. Vuong, B. Heinemann, W. Höppner, C.S. Rafferty, H. Rücker, P. Schwander, A. Ourmazd, IEDM Technical Digest, 713 (1998).

125.   Two-Dimensional Mapping of PN Junctions by Electron Holography, W.-D. Rau, P. Schwander, and A. Ourmazd, Solid State Phenomena, 63-64, 525 (1998).

124.   Composition Mapping at High Resolution, P. Schwander, W.-D. Rau, and A. Ourmazd, Journal of Microscopy, 190, 171 (1998).

123.   Real-Space Analysis of Lattice Images and its Link to Conventional Theory, J.-L. Mau­rice, F. H. Baumann, P. Schwander, and A. Ourmazd, Ultramicroscopy, 68, 149 (1997).

122.   Characterization of Stacked Gate Oxides by Electron Holography, W.-D. Rau, F. H. Baumann, J. A. Rentschler, P. K. Roy, and A. Ourmazd, Appl. Phys. Lett., 68, 3410 (1996).

121.   High Resolution Composition Profiles of Multilayers, F. H. Baumann, M. Gribelyuk, Y. Kim, C. Kisielowski, J.-L. Maurice, W.-D. Rau, J. A. Rentschler, P. Schwander, and A. Ourmazd, Phys. Stat. Sol. (a), 150, 31 (1995).

120.   An Approach to Quantitative High-Resolution Transmission Electron Microscopy of Crystalline Materials, C. Kisielowski, P. Schwander, F. H. Baumann, M. Seibt, Y. Kim, and A. Ourmazd, Ultramicroscopy, 58, 131 (1995).

119.   Impact of Boron Diffusion through O2 and N2O Gate Dielectrics on the Process Margin of Dual-poly Low Power CMOS , K.S. Krisch, L. Manchanda, F.H. Baumann, M.L. Green, D. Brasen, L.C. Feldman, and A. Ourmazd, IEDM Technical Digest, 325 (1994).

118.   Multilayers as Microlabs for Defects: Effect of Stain on Diffusion in Semiconductors, F.H. Baumann, J-H. Huang, J.A. Rentschler, T.Y. Chang, and A. Ourmazd, Phys. Rev. Lett., 73, 448 (1994).

117.   Quantitative HRTEM: Measuring Projected Potential, Surface Roughness and Chemi­cal Composition, P. Schwander, C. Kisielowski, F. H. Baumann, M. Seibt, Y. O. Kim, and A. Ourmazd, Mat. Res. Soc. Symp. Proc., 332, 373  Pittsburgh (1994).

116.   Mapping Projected Potential, Interfacial Roughness, and Composition in General Crystalline Solids by Quantitative Transmission Electron Microscopy, P. Schwander, C. Ki­sielowski, M. Seibt, F. H. Baumann, Y. O. Kim, and A. Ourmazd, Phys. Rev. Lett., 71, 4150 (1993).

115.   Quantitative Microscopy of Thin Films, C. Kisielowski, P. Schwander, Y. Kim, J-L. Rouviere, and A. Ourmazd, Phys. Stat. Sol. (a), 137, 557 (1993).

114.   Interface Roughness: What is it and How is it Measured?, E. Chason, C. M. Falco, A. Ourmazd, E. F. Schubert, J. M. Slaughter, and R. S. Williams, Mat. Res. Soc. Symp. Proc., 280, 251 (1993).

113.   Analysis of the Information in Transmission Electron Micrographs, A. Ourmazd, P. Schwander, C. Kisielowski, M. Seibt, F. H. Baumann and Y. O. Kim, Inst. Phys. Conf. Ser., 134, 1 (1993).

112.   Toward Giga-Scale Silicon Integrated Circuits, C. A. Warwick, R-H. Yan, Y. O. Kim, and A. Ourmazd, AT&T Technical Journal, 72, 50 (1993).

111.   Room Temperature 0.1mm  CMOS Technology with 11.8 ps Gate Delay, K. F. Lee, R. H. Yan, D. Y. Jeon, G. M. Chin, Y. O. Kim, D. M. Tennant, B. Razavi, H. D. Lin, Y. G. Wey, E. H. Westerwick, M. D. Morris, R. W. Johnson, T. M. Liu, M. Tarsia, M. Cerullo, R. G. Swartz, and A. Ourmazd, IEDM Technical Digest, 131 (1993).

110.   Trends and Limits in Monolithic Integration by Increasing the Die Area, C. A. Warwick and A. Ourmazd, IEEE Transactions on Semiconductor Manufacturing, 6, 284 (1993).

109.   Chemical Mapping and its Application to Interfaces, Point Defects, and Materials Pro­cessing, A. Ourmazd, Mat. Sci. Rpt., 9, 201 (1993).

108.  0.1 µm p-channel MOSFETs with 51 GHz fT, K. F. Lee, R. H. Yan, D. Y. Jeon, Y. O. Kim, D. M. Tennant, E. H. Westerwick, K. Early, G. M. Chin, M. D. Morris, R. W. Johnson, T. M. Liu, R. C. Kistler, A. M. Voshchenkov, R. G. Swartz and A. Ourmazd, IEDM Technical Digest, 1012 (1992).

107.   High Performance 0.1-mm room temperature Si MOSFET, R.H. Yan, K.F. Lee, D.Y. Jeon, Y.O. Kim, B.G. Park, M.R. Pinto, C.S. Rafferty, D.M. Tennant, E.H. Westerwick, G.M. Chin, M.D. Morris, K. Early, P.  Mulgrew, W.M.  Mansfield, R.K. Watts, A.M. Voshchenkov, J. Bokor, R.G. Swartz, A.  Ourmazd,  VLSI Technology, Digest of Technical Papers 86 (1992).

106.   Microscopic Properties of Thin Films: Learning about Point Defects, A. Ourmazd, M. Scheffler, M. Heinemann, J-L. Rouviere, MRS Bulletin, 17, 24 (1992).

105.   Chemical Characterization of (In,Ga)As/(Al,Ga)As Strained Interfaces Grown by Metalorganic Chemical Vapor Deposition, J. Kim, J. J. Alwan, D. V. Forbes, J. J. Coleman, I. M. Robertson, C. M. Wayman, F. H. Baumann, M. Bode, Y. O. Kim, and A. Ourmazd, Appl. Phys. Lett., 61, 28 (1992).

104.   Measuring Properties of Point Defects by Electron Microscopy: The Ga Vacancy in GaAs, J. L. Rouviere, Y. O. Kim, J. Cunningham, J. A. Rentschler, A. Bourret, and A. Ourmazd, Phys. Rev. Lett., 68, 2798 (1992).

103.   89-GHzfT Si Room-Temperature Silicon MOSFETs, R. H. Yan, K. F. Lee, D. Y. Jeon, Y. O. Kim, B. G. Park, M. R. Pinto, C. S. Rafferty, D. M. Tennant, E. H. Westerwick, G. M. Chin, M. D. Morris, K. Early, P. Mulgrew, W. M. Mansfield, R. K. Watts, A. M. Voshchenkov, J. Bokor, R. G. Swartz, and A. Ourmazd, IEEE Electron Device Let­ters, 13, 256 (1992).

102.   Solid State Processes at the Atomic Level, A. Ourmazd, F. H. Baumann, M. H. Bode, Y. O. Kim, and J. A. Rentschler, Mat. Sci. Forum, 83-87, 1339 (1992).

101.   Microstructure of the Emitter Polycrystalline Silicon/Silicon Interface in Bipolar Transistors after Rapid Thermal Annealing, Y. O. Kim, T. M. Liu, K. F. Lee, D. Y. Jeon, J. A. Rentschler, and A. Ourmazd, Appl. Phys. Lett., 60, 437 (1992).

100.   Interfaces in GaAs/AlAs: Perfection and Applications, M. H. Bode and A. Ourmazd, J. Vac. Sci. Technol. (B), 10, 1787 (1992).

99.     Scaling the Si MOSFET: from Bulk to SOI to Bulk, R.-H. Yan, A. Ourmazd, and K. F. Lee, IEEE Transactions on Electronic Devices, 39, 1704 (1992).

98.     Quantitative Chemical Mapping: Spatial Resolution, A. Ourmazd, F. H. Baumann, M. H. Bode, and Y. O. Kim, Ultramicroscopy, 47, 167 (1992).

97.     HgCdTe/CdTe Multiple Quantum Wells: Growth, Stability, and Optical Properties, R. D. Feldman, R. F. Austin, C. L. Cesar, M. N. Islam, C. E. Soccolich, Y. Kim, and A. Ourmazd, Proc. Mat. Res. Soc. 216, 113 (1991).

96.     Scaling the Si MOSFET into the 0.1mm Regime, R. H. Yan, A. Ourmazd, K. F. Lee, D. Y. Jeon, C. S. Rafferty, and M. R. Pinto, Appl. Phys. Lett., 59, 3315 (1991).

95.     The Control of Polysilicon/Silicon Interface Processed by Rapid Thermal Anneal, T. M. Liu, Y. O. Kim, K. F. Lee, D. Y. Jeon, and A. Ourmazd, IEEE Bipolar Circuits and Technology Meeting, 263 (1991).

94.     Interaction of Energetic Ions with Inhomogeneous Solids, M. H. Bode, A. Ourmazd, J. E. Cunningham, and M. Hong, Phys. Rev. Lett., 67, 843 (1991).

93.     Chemical Mapping of Materials at the Atomic Level, A. Ourmazd, F. H. Baumann, M. H. Bode, Y. O. Kim, and J.-L. Rouviere, EMSA Proceedings, 844 (1991) and Advan­ces in Solid-State Physics (Festkörperprobleme), 31, 99 (1991).

92.     Morphology of GaAs Quantum Well Interfaces Grown by Liquid Phase Epitaxy, U. Morlock, J. Christen, D. Bimberg, E. Bauser, H.-J. Queisser, and A. Ourmazd, Phys. Rev. B, 44, 8792 (1991).

91.     Mapping the Composition of Materials at the Atomic Level, A. Ourmazd, F.H. Bau­mann, M. Bode, and Y. Kim, Festkörperprobleme, 31, 99 (1991).

90.     Chemical Lattice Imaging of a Ni-Based Superalloy, J. M. Pénisson, M. Bode, F. H. Baumann, and A.  Ourmazd, Phil. Mag., 64, 269 (1991).

89.     Gas Source Molecular Beam Epitaxy Growth of Heterojunction Bipolar Transistors Containing 1 Monolayer d-Be, J. E. Cunningham, T. Y. Kuo, A. Ourmazd, K. Goossen, W. Jan, F. Storz, F. Ren, and C. G. Fonstad, J. Cryst. Growth, 111, 515 (1991).

88.     Effects of Substrate Orientation, Pseudomorphic Growth and Superlattice on Alloy Scattering in Modulation Doped GaInAs, A. Chin, T. Y. Chang, A. Ourmazd, E. M. Monberg, A. M. Chang, and C. Kurdak, J. Cryst. Growth, 111, 466 (1991).

87.     Interfaces, A. Ourmazd, R. Hull, and R. Tung, Electronic Structure & Properties of Semiconductors (Mat. Sci. and Tech. Series), ed. W. Schröter, (VCH, Weinheim 1991), p. 379.

86.     Partial Ordering and Enhanced Mobility in Ga0.47 In0.53 As Grown on Vicinal (110) InP, A. Chin, T. Y. Chang, A. Ourmazd, and E. M. Monberg, Appl. Phys. Lett., 58, 968 (1991).

85.     Native Oxidation of the Si(001) Surface: Evidence for an Interfacial Phase, G. Renaud, P. H. Fuoss, A. Ourmazd, J. Bevk, B. S. Freer, and P. O. Hahn, Appl. Phys. Lett., 58, 1044 (1991).

84.     Quantitative Chemical Lattice Imaging:  Theory and Practice, A. Ourmazd, F. H. Baumann, M. Bode, and Y. O. Kim, Ultramicroscopy, 34, 237 (1990).

83.     Response to Comment on Chemical Mapping of Interfaces, A. Ourmazd and J. E. Cunningham, Phys. Rev. Lett., 65, 2318 (1990).

82.     Stability of Multilayered Semiconductor Systems, Y. O. Kim and A. Ourmazd, Proc. Mat. Res. Soc., 184, 101 (1990).

81.     Chemical Interfaces:  Structure, Properties, and Relaxation, A. Ourmazd, MRS Bulle­tin, 15, 58 (1990).

80.     Atomically Abrupt and Smooth Heterointerfaces: An Optical Investigation, C. A. Warwick, W. Y. Jan, A. Ourmazd, T. D. Harris, and J. Christen, Proc. Mat. Res. Soc., 198, 129 (1990).

79.     Monolayer Be d-doped Heterostructure Bipolar Transistor Fabricated using Doping Selective Base Contact, T. Y. Kuo, J. E. Cunningham, K. W. Goossen, W. Y. Jan, C.G. Fonstad, A. Ourmazd, and F. Ren, Elec. Lett., 26, 1187 (1990).

78.     Does Luminescence Show Semiconductor Interfaces to be Atomically Smooth? C. A. Warwick, W. Y. Jan, A. Ourmazd, and T. D. Harris, Appl. Phys. Lett., 56, 2666 (1990).

77.     Diffusion and Interdiffusion in Multilayered Semiconductor Systems, A. Ourmazd, Y. O. Kim, and M. H. Bode, Proc. Mat. Res. Soc., 163, 639 (1990).

76.     Diffusion Limited d-doping Profiles in GaAs Grown by Gas Source Molecular Beam Epitaxy,  J. E. Cunningham, T. H. Chiu, A. Ourmazd, W. Y. Jan, and T. Y. Kuo, J. Cryst. Growth, 105, 111 (1990).

75.     Interfacial Stability and Interdiffusion Examined at the Atomic Level, Y. O. Kim, A. Ourmazd, R. J. Malik, and J. A. Rentschler, Proc. Mat. Res. Soc., 159, 351 (1990).

74.     Strain Effects in Epitaxial Monolayer Structures: Si/Ge and Si/SiO2 Systems, J. Bevk, L. C. Feldman, T. P. Pearsall, G. P. Schwartz, and A. Ourmazd, J. Mat. Sci. Eng. B, 6, 159 (1990).

73.     Direct Observation of Intermixing in GaAs/AlAs Multilayers after very Low-dose Ion Implantation, M. H. Bode, A. Ourmazd, J. A. Rentschler, M. Hong, L. C. Feldman, and J. P. Mannaerts, Proc. Mat. Res. Soc., 157, 197 (1990).

72.     Direct Imaging of d-Doped Layers in GaAs, A. Ourmazd, J. Cunningham, W. Jan, J. A. Rentschler, and W. Schröter Appl. Phys. Lett., 56, 854 (1990).

71.     Diffusion in Multilayers, Studied by Quantitative Chemical Mapping at the Atomic Level, Y. O. Kim and A. Ourmazd, Proc. of Elec. Microscopy Soc. of America, in press.

70.     Characterization of Pseudomorphic InGaAs Channel MODFETs Grown by MBE, R. F. Kopf, J. M. Kuo, J. Kovalchick, S. J. Pearton, E. D. Jones, and A. Ourmazd, J. Appl. Phys., 68, 4029 (1990).

69.     Low Temperature Interdiffusion in the HgCdTe/CdTe System, Studied at Near-Atomic Resolution, Y. O. Kim, A. Ourmazd, and R. D. Feldman, J. Vac. Sci. Technol. (A), 8, 1116 (1990).

68.     Non-Linear Diffusion in Multilayered Semiconductor Systems, Y. Kim, A. Ourmazd, M. Bode, and R. D. Feldman, Phys. Rev. Lett., 63, 636 (1989).

67.     Quantifying the Information Content of Lattice Images,  A. Ourmazd, D. W. Taylor, M. Bode, and Y. Kim, Science, 246, 1571, (1989).

66.     Atomic Abruptness and Smoothness at Heterointerfaces: Fact or Fiction?, A. Ourmazd and Y. O. Kim, Proc. Mat. Res. Soc., 144, 127 (1989).

65.     Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution, A. Ourmazd, D. W. Taylor, J. Cunningham, and C. W. Tu, Phys. Rev. Lett., 62, 933 (1989).

64.     Electronic Structure of Ge/Si Monolayer Strained-layer Superlattices, T. P. Pearsall, J. Bevk, J. C. Bean, J. Bonar, J. P. Mannaerts, and A. Ourmazd, Phys. Rev. B., 39, 3741 (1989).

63.     The Si(001)/SiO2 Interface, A. Ourmazd, P. H. Fuoss, J. Bevk, and J. F. Morar, Applications of Surface Science, 41/42, 365 (1989).

62.     Local Atomic Interdiffusion in CdTe/HgCdTe Multilayered Structures, Y. Kim, A. Our­mazd, R. D. Feldman, J. A. Rentschler, D. W. Taylor, and R. F. Austin, Proc. Mat. Res. Soc., 144, 163 (1989).

61.     Semiconductor Interfaces: Abruptness, Smoothness, and Optical Properties, A. Ourmazd, J. Cryst. Growth, 98, 72 (1989).

60.     The Atomic Structure of GaAs/AlGaAs Interfaces and its Correlation with the Optical Properties of Quantum Wells, A. Ourmazd, J. Cunningham, D. W. Taylor, J. A. Rent­schler and C. W. Tu, Mat. Sc. Forum, 38-41, 689 (1989).

59.     The Modern Transmission Electron Microscope: A Super Magnifying Glass, or an Imaging Electron Spectrometer?, A. Ourmazd, Proc. 19th Intl. Conf. Phys. Semiconduc­tors, 559 (1988).

58.     Structural and Chemical Characterization of Semiconductor Interfaces by High Resolution Transmission Electron Microscopy, A. Ourmazd, Properties of Impurity States in Superlattice Semiconductors, ed. by C. Y. Fong, I. P. Batra, and S. Ciraci, p. 63 (Plenum, 1988).

57.     High Critical-current Density Ba2YCu3O7 Thin Films Produced by Coevaporation of Y, Cu, and BaF2, P.M. Mankiewich, R.E. Howard, W.J. Skocpol, A.H. Dayem, and A. Ourmazd, Proc. Symp. High-temperature Superconductors, 119, (1988).

56.     The Structure of the Si/SiO2 Interface: A Review, A. Ourmazd and J. Bevk, The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, ed. C. R. Helms and B. E. Deal, p. 189 (Plenum, 1988).

55.     Strained Layer Semiconductor Films: Structure and Stability, L. C. Feldman, J. Bevk, B. A. Davidson, H-J. Gossmann, A. Ourmazd, T. P. Pearsall and M. Zinke-Allmang, Proc. Mat. Res. Soc., 102, 405 (1988)

54.     The Structure of the (001)Si/SiO2 Interface, A. Ourmazd and J. Bevk, Proc. Mat. Res. Soc. 105, 1 (1988).

53.     Effect of Processing on the Structure of the Si/SiO2 Interface, A. Ourmazd, J. A. Rentschler, and J. Bevk, Appl. Phys. Lett., 53, 743 (1988).

52.     Structural Characterization of Ba2 YCu3 O7 by High Resolution Transmission Electron Microscopy, A. Ourmazd, J. C. H. Spence, J. M. Zuo, and C. H. Li, J. Elec. Micro. Techn., 8, 251 (1988).

51.     Detection of Oxygen Ordering in Superconducting Cuprates, A. Ourmazd and J. C. H. Spence, Nature, 329, 425 (1987).

50.     Microstructure, Oxygen Ordering and Planar Defects in the high-Tc Superconductor YBa2Cu3O6.9, A. Ourmazd, J. A. Rentschler, J. C. H. Spence, M. O'Keeffe, R. J. Graham, D. W. Johnson, Jr., and W. W. Rhodes, Nature, 327, 308 (1987).

49.     Magnetic Microstructure and Flux Dynamics of High-Tc Superconductors, A. Ourmazd, J. A. Rentschler, W. J. Skocpol, and D. W. Johnson, Jr., Phys. Rev. B., 36, 8914 (1987).

48.     Atomic Structure of Semiconductor Interfaces, A. Ourmazd, W. T. Tsang, J. A. Rentschler, and D. W. Taylor, J. Vac. Sci. Technol (B)., 5, 1155 (1987).

47.     Structural Analysis of Ultrathin Epitaxial Ge/Si Films on Si(100), J. Bevk, B. A. Davidson, L. C. Feldman, H-J. Gossman, J. P. Mannaerts, S. Nakahara, and A. Ourmazd, J. Vac. Sci. Technol. (B), 5, 1147 (1987).

46.     New Optical Transitions in Ge-Si Ordered Atomic-Layer Structures, T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, and A. Ourmazd, J. Vac. Sci. Technol. (B), 5, 1274 (1987).

45.     Si / SiO2 Transformation: Interfacial Structure and Mechanism, A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Lett., 59, 213 (1987).

44.     Molecular Beam Epitaxial Growth of II-V Semiconductor Zn3As2 and II-IV-V Chalcopyrite ZnGeAs2, B. Chelluri, T. Y. Chang, A. Ourmazd, A. H. Dayem, J. L. Zyskind, and A. Srivastava, J. Cryst. Growth, 81, 530 (1987).

43.     Determination of the Atomic Configuration at Semiconductor Interfaces, A. Ourmazd, W. T. Tsang, J. A. Rentschler, and D. W. Taylor, Appl. Phys. Lett., 50, 1417 (1987).

42.     Structure and Optical Properties of GeSi Ordered Superlattices, J. Bevk, A. Ourmazd, L. C. Feldman, T. P. Pearsall, J. M. Bonar, B. A. Davidson, and J. P. Mannaerts, Appl. Phys. Lett., 50, 760 (1987).

41.     Structurally Induced Optical Transitions in GeSi Superlattices, T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, and A. Ourmazd, Phys. Rev. Lett., 58, 729 (1987).

40.     Bragg Diffraction by Amorphous Silicon, J. C. Phillips, J. C. Bean, B. A. Wilson, and A. Ourmazd, Nature, 325, 121 (1987).

39.     Molecular Beam Epitaxial Growth of the II-V Semiconductor Compound Zn3As2, B. Chelluri, T.Y. Change, A. Ourmazd, A.H. Dayem, J.L. Zyskind, App. Phys. Lett., 49, 1665 (1986).

38.     High Quality Narrow GaInAs/InP Quantum Wells Grown by Atmospheric Organometallic Vapor Phase Epitaxy, B.I. Miller, E.F. Schubert, U. Koren, A. Ourmazd, A.H. Dayem, and R.J. Capik, Appl Phys. Lett., 49, 1384 (1986).

37.     The Occurrence of Cross Hatch During GaAs Homoepitaxy, J. E. Cunningham, T. H. Chiu, A. Ourmazd, J. Shah, and W. T. Tsang, J. Appl. Phys., 60, 4165 (1986).

36.     High Resolution Transmission Electron Microscopy of Semiconductors and Their Defects, A. Ourmazd, Mat. Sci. Forum, 10-12, 735 (1986).

35.     Influence of Strain on Silicon Surface and Silicon Oxide Interface Reconstruction, A. Ourmazd, D. W. Taylor, J. Bevk, B. A. Davidson, L. C. Feldman, and J. P. Mannaerts, Mat. Sci. Forum, 10-12, 217 (1986).

34.     Direct Resolution and Identification of the Sublattices in Compound Semiconductors by High-Resolution Transmission Electron Microscopy, A. Ourmazd, J. Rentschler, and D. W. Taylor, Phys. Rev. Lett., 57, 3073 (1986).

33.     Observation of (5x5) Surface Reconstruction on Pure Silicon and Its Stability Against Native-Oxide Formation, A. Ourmazd, D. W. Taylor, J. Bevk, B. A. Davidson, L. C. Feldman, and J. P. Mannaerts, Phys. Rev. Lett., 57, 11 (1986).

32.     Ge-Si Layered Structures: Artificial Crystals and Complex Cell Ordered Superlattices, J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson, and A. Ourmazd, Appl. Phys. Lett., 49, 5 (1986).

31.     Gettering of Impurities in Silicon, A. Ourmazd, Proc. Mat. Res. Soc., 59, 331 (1986).

30.     Order-Disorder Transitions in Strained Semiconductor Systems, A. Ourmazd and J. C. Bean, Proc. Mat. Res. Soc., 56, 377 (1986).

29.     Gettering of Metallic Impurities in Silicon, A. Ourmazd and W. Schröter, Proc. Mat. Res. Soc., 36, 25 (1985).

28.     Submicrocrystallites and the Orientational Proximity Effect, A. Ourmazd, J. C. Bean, and J. C. Phillips, Phys. Rev. Lett., 55, 15 (1985).

27.     Lattice and Atomic Structure Imaging of Semiconductors by High Resolution Transmission Electron Microscopy, A. Ourmazd, K. Ahlborn, K. Ibeh, and T. Honda, Appl. Phys. Lett., 47, 7 (1985).

26.     Observation of Order-Disorder Transitions in Strained Semiconductor Systems, A. Ourmazd and J. C. Bean, Phys. Rev. Lett., 55, 7 (1985).

25.     Electronic Structure of Oxygen Thermal Donors in Silicon, J. Robertson, and A. Ourmazd, Appl. Phys. Lett., 46, 6 (1985).

24.     Phosphorus Gettering and Intrinsic Gettering of Ni in Silicon, A. Ourmazd and W. Schröter, Appl. Phys. Lett., 45, 781 (1984).

23.     Oxygen-related Thermal Donors in Silicon; A New Structural and Kinetic Model, A. Ourmazd, A. Bourret, and W. Schröter, J. Appl. Phys., 56, 1670 (1984).

22.     Electrical Properties of Dislocations in Semiconductors, A. Ourmazd, Contemporary Physics, 25, 251 (1984).

21.     Some Aspects of the Measurements of Electrical Effects of Dislocations in Silicon Using a Computerised EBIC System, P. R. Wilshaw, A. Ourmazd, and G. R. Booker, J. de Physique C4-44, 445 (1983).

20.     The Temperature Dependence of EBIC Contrast From Individual Dislocations in Silicon, A. Ourmazd, P. R. Wilshaw, and G. R. Booker, J. de Physique C4-44, 289 (1983).

19.     Thermal Properties of Highly-birefringent Optical Fibres and Preforms, A. Ourmazd, M. P. Varnham, R. D. Birch, and D. N. Payne, Applied Optics, 22, 2374 (1983).

18.     Enhancement of Birefringence in Polarisation-Maintaining Fibres by Thermal Annealing, A. Ourmazd, R. D. Birch, M. P. Varnham, D. N. Payne, and E. Tarbox, Electronics Lett., 19, 143 (1983).

17.     The Electronic Properties of Individual Dislocations, Shockley Partials and Stacking Fault Ribbons in Silicon, A. Ourmazd, P. R. Wilshaw, and G. R. Booker, J. Physica B., 116 B, (1983).

16.     Dark-Field Electron Microscopy of Dissociated Dislocations and Surface Steps in Sili­con Using Forbidden Reflections, A. Ourmazd, G. R. Anstis, and P. B. Hirsch, Phil. Mag. A, 48, 139 (1983).

15.     The Electrical Behaviour of Individual Dislocations, Shockley Partials and Stacking Faults, A. Ourmazd, P. R. Wilshaw, E. Weber, H. Gottschalk, G. R. Booker, and H. Alexander, Proc. EMSA, p. 438 (1982).

14.     Measurement of Contrast From Individual Dislocations By Lock-in EBIC, A. Ourmazd, P. R. Wilshaw, and R. M. Cripps, Inst. Phys. Conf. Ser., 61, 519 (1981).

13.     A System for EBIC Analysis of Defects Using Controlled Low Temperatures in the SEM, E. D. Boyes, G. Dixon-Brown, and A. Ourmazd, Inst. Phys. Conf. Ser., 61, 517 (1981).

12.     The Electrical Behaviour of Individual Screw and 60× Dislocations in n-type Silicon, A. Ourmazd, E. Weber, H. Gottschalk, G. R. Booker, and H. Alexander, Inst. Phys. Conf. Ser., 60, 63 (1981).

11.     The Climb of Dissociated Dislocations in Semiconductors, A. Ourmazd, D. Cherns, and P. B. Hirsch, Inst. Phys. Conf. Ser., 60, 39 (1981).

10.     Lattice Images of the Cores of 30 deg. Partials in Silicon, G. R. Anstis, P. B. Hirsch, C. J. Humphreys, J. L. Hutchison, and A. Ourmazd, Inst. Phys. Conf. Ser., 60, 15 (1981).

9.       Relaxation of Dislocations in Deformed Silicon, P. B. Hirsch, A. Ourmazd, and P. Pirouz, Inst. Phys. Conf. Ser., 60, 29 (1981).

8. On the Interpretation of Atomic Images in Silicon and Related Materials, J. L. Hutchinson, C. J. Humphreys, and A. Ourmazd, Inst. Phys. Conf. Ser., 57, 122 (1981).

7. A Theoretical Interpretation of the Electrical Behaviour of Individual Edge Dislocations in Silicon as Determined by Combined EBIC/TEM Studies, A. Ourmazd, Kristall und Technik, 16, 137 (1981).

6. The Climb of Dissociated Dislocations, D. Cherns, G. J. Hardy, P. B. Hirsch, A. Ourmazd, and H. Saka, Proc. of International Conf. on Dislocations, Gainesville, Fl. (1980).

5. The Electrical Recombination Efficiency of Individual Edge Dislocations and Stacking Fault Defects in n-type Silicon, A. Ourmazd and G. R. Booker, Phys. Stat. Sol. (a), 55, 771 (1979).

4. Electrical Recombination Behaviour at Dislocations in Gallium Phosphide and Silicon, G. R. Booker, A. Ourmazd, and D. B. Darby, J. du Physique, Colloq. C6-40, 19 (1979).

3. Influence of Dissociation of Individual Dislocations in Silicon into Shockley Partials on Their Carrier Recombination Efficiency, A. Ourmazd and G. R. Booker, Solid State Electronics, 21, 1617 (1978).

2. A New Dissociation Mode for Dislocations in Silicon, A. Ourmazd, G. R. Booker, and C. J. Humphreys, Proc. 9th International Congress on Electron Microscopy, 346 (1978).

1. TEM/SEM Studies Comparing Diffraction, Electrical and Luminescent Contrast From Dislocations in Semiconductor Specimens, A. Ourmazd, D. B. Darby, and G. R. Booker, Inst. Phys. Conf. Ser. 36, 251 (1977).

 

 

Abbas Ourmazd

  Department of Physics

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